Welcome to MSCAD Semi Concductor Devices Group

Welcome to Semiconductor Devices Group at MSCAD lab headed by Dr. Alan Mantooth.

Modeling Silicon Carbide Devices for Power Supply Performance Evaluation

Dr. Alan Mantooth
Professor
Department of Electrical Engineering
University of Arkansas
3217 Bell Engineering Center
Fayetteville, AR 72701
Phone: (479) 575-4838
FAX: (479) 575-7967
E-mail: mantooth@engr.uark.edu

	Avinash Kashyap Candidate for Ph.D in Electrical Engineering M.S Electrical Engineering, University of Arkansas B.Tech Electrical & Electronics Engg. Biography: Origin: Chennai, India Areas of interest: Silicon carbide devices, device characterization & modeling, device fabrication/processing, application development, device design and layout, testing, material science. Research: Avinash leads the SiC device modeling effort at Arkansas. He was involved in the characterizing and modeling of SiC SITs, JFETs and cascode devices (SiC JFET with a Si MOSFET). The work involved developing models for extreme environment switching applications (for temperatures of up to 450C). The models were written in the MAST HDL and simulated in the Saber suite. MEDICI simulations were performed to understand the physics of the device. Validation of the models was done with devices from Northrop Grumman, SiCED (Infineon) and SemiSouth. Avinash was also involved in re-implementing the SiC device models in the IEEE standard VHDL-AMS language using the Paragon package developed in-house. He is also involved in designing gate-drivers and test-fixtures for characterizing SiC devices. M.S Thesis Title: Compact modeling of silicon carbide junction field effect devices
	Resume: PDF
	Homepage: http://comp.uark.edu/~akashya
	email:akashya@uark.edu

	Jared Hornberger Candidate for Ph.D in Electrical Engineering. Biography: Origin: Education: M.S Electrical Engineering from U of A. B.S Electrical Engineering from U of A. Areas of Interest: Power Electronics Circuit Design Working Project:
	Resume: PDF \|\| RTF/Word - Yet to be updated
	email: jhornbe@uark.edu

	Daniel Hotz Candidate for MS in Electrical Engineering. Biography: Origin: Education: B.S Electrical Engineering from U of A. Areas of Interest: Characterizing power devices and testing them to their limits. Working Project: Modeling of Silicon Carbide Insulated Gate Bipolar Transistors and MOSFETs using the MAST modeling language.
	Resume: WORD
	email: dhotz@uark.edu

	Edgar Cilio Candidate for MS in Electrical Engineering. Biography: Origin: Quito, Ecuador (US citizenship eligibility on July 2004) Education:University of Arkansas BS in Electrical Engineering–Expected Date of Graduation Fall 2004 Northwest Arkansas Community College Asscociate of Science -- December 2001 Areas of Interest:signal processing and IC design Working Project: Edgar is working on development of virtual instrumentation using LabView and LabWindows/CVI.He is also currently member of the Solar Boat Team, where he is implementing the telemetry system of the boat
	Resume: PDF \|\| RTF/Word
	email: ecilio@uark.edu

	Alvin Ong Candidate for MS in Electrical Engineering. Biography: Origin: Singapore Education: B.Sc in Electrical Engineering, Arkansas Tech University, AR Areas of Interest: IC design and fabrication, Device modeling, ASIC design Working Project: SiC Device Testing
	Resume: WORD
	email: aong@uark.edu

	Osama Saadeh Candidate for MS in Electrical Engineering. Biography: Origin:Jordan Education: B.Sc in Electrical Engineering, Jordan University of Science and Technology. Irbid-Jordan Areas of Interest: Semiconductor modeling and characterizing Working Project: Modeling and characterizing of SiC power devices
	Resume: WORD
	email: osaadeh@uark.edu

	Prasanna Ramavarapu Candidate for MS in Electrical Engineering. Biography: Origin: India Education: B.Tech in Electrical Engineering. Areas of Interest: Power Device Modeling using the lumped charge techniques. Working Project: Currently working on the lumped charge modeling of power JFET.
	Resume: PDF \|\| RTF/Word - Yet to be updated
	email: pramava@uark.edu

Semiconductor Devices Group Alumni

Dr. Alexander Lostetter led the SiC power device modeling research effort of the MSCAD group. He received his B.S. and M.S. in Electrical Engineering from Virginia Tech and his Ph.D. from the University of Arkansas.
Dr. Lostetter worked at Lockheed-Martin’s Space Electronics Division in the Radiation-Hardened Semiconductor Group following his Master’s degree and his expertise lies in the area of power-electronics design and power-electronics packaging. He is currently the President of Arkansas Power Electronics International.

Dissertation Title: The Design, Fabrication, and Analysis of Half-Bridge Multichip Power Modules (MCPMs)Utilizing Advanced Laminate, Silicon-Carbide, and Diamond-Like-Carbon Technologies.

Resume: PDF

email: alostet@apei.net

Ty McNutt
Graduated with Ph.D in Electrical Engineering from University of Arkansas
Biography:
Origin: Ozark,Arkansas

Areas of Interest: Characterization and modeling of semiconductor devices, Silicon Carbide (SiC) device physics, Silicon-on-Insulator (SOI) circuit design, and high temperature electronics.

Ty developed characterization methods and compact circuit simulator models for state-of-the-art Silicon Carbide (SiC) power devices. Ty has developed models for the commercially available SiC Schottky diode, as well as prototype Merged-Pin-Schottky (MPS), PiN, and DiMOSFET devices. Ty has also developed over ten novel thermal-based data isolator structures for SOI systems-on-a-chip applications and worked to optimize on-chip DC-DC converters implemented in SOI. He is currently with Northrop Grumman Corporation.

Dissertation Title: Modeling and characterization of silicon carbide power devices

Resume: PDF

email: ty.mcnutt@ngc.com

Sharmila Maganlal
Graduated with M.S in Electrical Engineering from University of Arkansas
Biography: Origin: Singapore

Sharmila worked on the charecterization of SiC SITs(static induction transistors). She is currently a design engineer at Arkansas Power Electronics International.

M.S Thesis Title: Electrical characterizations of silicon carbide (SiC) static induction transistors (SITs)and vertical channel junction field effect transistors (VJFETs)

email: smaganl@apei.net

Kevin M. Speer
Graduated with BS in Electrical Engineering.
Origin: Searcy, Arkansas

Areas of Interest:Power Electronics, Semiconductor Device Physics, Optoelectronics

Worked on: Kevin worked on the reverse-recovery (RR) characterization of Silicon Carbide (SiC) power diodes. He implemented a SiC Static Induction Transistor (SIT) as the switching device in his RR test bed in an effort to prove the high-frequency superiority of SiC switching devices over conventional Silicon-based devices. He is currently pursuing Ph.D in Material Science at Case Western Reserve University.