Current Projects
Modeling
Silicon Carbide Devices for Power Supply
Performance Evaluation
This project will concentrate
on compact circuit simulation models for
Silicon Carbide (SiC) devices. Namely,
the power MPS diode, PiN diode, BJT, MOSFET,
and npnp thyristor and MTO devices will
be investigated.
Specifically, the project objectives
are to:
- Physically
characterize MPS, PiN, BJT, MOSFET,
and thyristor SiC devices
- Design &
develop circuit simulation models for
these devices
- Validate
the SiC power device models against
actual device measurements
- Demonstrate
and validate SiC power device models
in key power electronic applications
.
Compact circuit simulation
models enable designers to more effectively
utilize a technology in circuits and systems.
Power electronic designers rely on computer
simulation for insight into the details
of the operation of their circuits. In
addition to nominal operating conditions,
the designer analyzes the robustness of
the design through a number of studies
such as dynamic thermal analysis, worst
case analysis, statistical variations
in circuit performance due manufacturing
tolerances on parts, and failure modes
and effects to determine the safe operating
area of the circuit. In order to perform
these simulations, models are required.
Such analysis cannot practically be performed
using hardware prototypes.
Silicon carbide is
capable of operating temperatures of 500°C
because of its unique electrical and mechanical
properties. Other advantages compared
to silicon-based devices exist regarding
reliability, higher immunity to thermal
runaway, reduced switching losses, and
higher current density. Due to SiC’s
high thermal conductivity, significant
savings in system cooling requirements,
mass, and cost are likely for many aircraft,
shipboard, vehicle, and utility power
conversion applications.
SiC’s higher
breakdown electric field allows the design
of SiC power devices with thinner (1/10th
that of silicon devices) and more highly
doped (more than 10 times higher) voltage
blocking layers. For majority carrier
power devices such as power Schottky diodes
and MOSFETs, the combination of 1/10th
the blocking layer thickness with 10 times
the doping concentration can yield a SiC
device with a factor of 100 advantage
in resistance compared to that of Si majority
carrier devices. For minority carrier
conductivity modulated devices such as
PiN diodes, BJTs, and thyristors a blocking
layer of 1/10th the thickness of a Si
device can result in a factor of 100 faster
switching speed.
Now that SiC power
devices are becoming more reliable and
reproducible, it is time for research
and development of accurate, physical-based
models to commence. As the number of commercially
available SiC devices increase, designers
will require an increasing number of component
models (characterized parts) for use in
circuit simulators. Since it takes on
the order of two years to correctly construct
and validate an accurate model, it is
imperative that SiC device models be developed
somewhat in parallel with the device technologies.
Collaborators at two
federal agencies, National Institute of
Standards and Technology (NIST) and NASA
Glenn, will provide access to SiC devices,
facilities, and summer employment to the
UA researchers throughout the duration
of the project.
:::::Downloads
> Complete
Abstract
This is the complete abstract for the
silicon carbide project in Adobe PDF
format.
> Display
Poster
Large poster for the SiC project on
display in the laboratory. JPG format
(549 KB)
> Kickoff
Presentation
Contains research as of 11.14.01 from
the kickoff meeting at the National
Institute of Standards and Technology
(NIST). May require a slight delay for
download.
Project Information (Lab-Exclusive):
Silicon-Carbide (SiC) Electronics Prepared
by
Juan Carlos Balda, Fred Barlow, Alexander
B. Lostetter, Alan Mantooth .
Download
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